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Refereed Articles |
Coulomb Glass Origin of Defect-Induced Dielectric Loss in Thin Film Oxides |
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The dielectric loss in amorphous, thin-film oxide insulators produces a real part of the ac conductivity  ![[prime]](http://scitation.aip.org/stockgif2/prime-script.gif) ( ) that scales as s with s~1. Conventional models explain this frequency dependence by hopping or tunneling of charge between neighboring defect sites. These models fail at low temperatures since they predict that should vanish at T = 0. We observe that the ac conductivity of Ta2O5, ZnO, and SiO2 has a nonzero extrapolated value at T = 0. We propose that this behavior is consistent with the predictions of a Coulomb glass, an insulator with a random distribution of charged defects. |
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|Formatted Citation| |
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Coulomb Glass Origin of Defect-Induced Dielectric Loss in Thin Film Oxides. R. Fleming, C. Varma, D. Lang, C. Jones, M. Steigerwald, G. Kowach, Appl. Phys. Lett. 2001, 78, 4016. |
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